- 您现在的位置：买卖IC网 > Sheet目录408 > DMP57D5UFB-7 (Diodes Inc)MOSFET P-CH 50V 200MA 3-DFN
NOT RECOMMENDED FOR NEW DESIGN
USE DMP56D0UFB
Maximum Ratings @T A = 25°C unless otherwise specified
DMP57D5UFB
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-50
±8
Units
V
V
Drain Current (Note 4) Steady
Pulsed Drain Current (Note 5)
T A = 25 ° C
I D
I DM
-200
-700
mA
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
425
294
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-50
?
?
?
?
?
?
-10
± 500
V
μ A
nA
V GS = 0V, I D = -250 μ A
V DS = -50V, V GS = 0V
V GS = ± 8V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V GS(th)
R DS (ON)
|Y fs |
V SD
-0.7
?
?
100
?
?
4.6
6
?
?
-1.0
6
8
?
-1.2
V
Ω
mS
V
V DS = V GS , I D = -250 μ A
V GS = -4.0V, I D = -100mA
V GS = -2.5V, I D = -80mA
V DS = -5V, I D = -100mA
V GS = 0V, I S = -100mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
29
7.3
2.5
?
?
?
pF
pF
pF
V DS = -4V, V GS = 0V
f = 1.0MHz
Notes:
4. Device mounted on FR-4 PCB. t ≤ 5 sec.
5. Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%.
6. Short duration pulse test used to minimize self-heating effect.
0.8
0.7
0.4
0.6
0.5
V GS = -10V
V GS = -4.5V
0.3
V DS = -5V
0.4
0.2
T A = 25°C
0.3
T A = -55°C
T A = 150°C
0.2
V GS = -2.5V
0.1
T A = 85°C
0.1
V GS = -1.8V
0
V GS = -1.5V
0
0
0.5
1
1.5 2 2.5 3 3.5 4 4.5
5
0.5
1 1.5 2 2.5
3
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMP57D5UFB
Document number: DS31274 Rev. 6 - 3
2 of 5
www.diodes.com
December 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
DMP58D0LFB-7B
MOSFET P-CH 50V 180MA 3-DFN
DMP58D0SV-7
MOSFET P-CH 50V 160MA SOT-563
DMS2120LFWB-7
MOSFET P-CH 20V 2.9A 8DFN
DMS2220LFDB-7
MOSFET P-CH 20V 3.5A 6-DFN
DMS2220LFW-7
MOSFET P-CH 20V 2.9A 8-DFN
DMS3012SFG-7
MOSFET N CH 30V POWERDI 3333-8
DMS3014SFG-7
MOSF N CH 30V 9.5A POWERDI3333-8
DMS3014SSS-13
MOSFET N-CH 30V 11A SO8
相关代理商/技术参数
DMP57D5UV
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
DMP57D5UV-7
功能描述:MOSFET 50V PMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP58D0LFB
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP58D0LFB-7
功能描述:MOSFET MOSFET BVDSS: 41V-60 X1-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP58D0LFB-7B
功能描述:MOSFET P-CH 50V 180MA 3-DFN RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
DMP58D0SV
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP58D0SV-7
功能描述:MOSFET PMOS-Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP6101A
功能描述:固态继电器-PCB安装 Input Mod., 5Vdc, 4-32Vdc In
RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT